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參數(shù)資料
| 型號(hào)： | APTM50H14FT3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 26 A, 500 V, 0.168 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | APTM50H14FT3G |
APTM50H14FT3G
A
www.microsemi.com
5 - 6
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
B
D
,
V
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
R
D
(
(
V
GS
=10V
I
D
=13A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (°C)
V
G
(
(
limited by R
DS
on
Maximum Safe Operating Area
10ms
1ms
100μs
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
limited by R
DSon
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
Capacitance vs Drain to Source Voltage
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
14
0
20
40
60
80
100
Gate Charge (nC)
V
G
,
Gate Charge vs Gate to Source Voltage
I
D
=26A
T
J
=25°C
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