參數(shù)資料
型號: APTM50H10FT3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: Full - Bridge MOSFET Power Module
中文描述: 37 A, 500 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 309K
代理商: APTM50H10FT3G
APTM50H10FT3G
A
www.microsemi.com
1 - 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
V
DSS
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Parameter
Max ratings
500
37
28
140
±30
120
312
37
50
1600
Unit
V
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
V
m
W
A
T
c
= 25°C
mJ
V
DSS
= 500V
R
DSon
= 100m
typ @ Tj = 25°C
I
D
= 37A @ Tc = 25°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
FREDFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
MOSFET Power Module
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