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參數(shù)資料
| 型號： | APTM50DDAM65T3 |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTM50DDAM65T3 |
APTM50DDAM65T3
A
P
T
M
50D
D
A
M
65T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
8V
0
40
80
120
160
200
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
0246
8
VGS, Gate to Source Voltage (V)
I D
,D
rai
n
C
u
rr
en
t
(A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0
1020
304050
60
ID, Drain Current (A)
R
DS
(o
n
)
D
rai
n
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 25.5A
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50DDAM65T3 | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DHM38 | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DHM38 | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DSK10T3 | 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DSK10T3 | 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| APTM50DHM35 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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| APTM50DHM38G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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