- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51277 > APTM50DDAM65T3 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM50DDAM65T3 |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 320K |
| 代理商： | APTM50DDAM65T3 |
APTM50DDAM65T3
A
P
T
M
50D
D
A
M
65T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
65
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7000
Coss
Output Capacitance
1400
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
90
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
40
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
70
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3
93
ns
Eon
Turn-on Switching Energy
1035
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
845
J
Eon
Turn-on Switching Energy
1556
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
1013
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
2.2
2.7
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
55
trr
Reverse Recovery Time
Tj = 125°C
151
ns
Tj = 25°C
121
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt=200A/s
Tj = 125°C
999
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50DDAM65T3 | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DHM38 | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DHM38 | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DSK10T3 | 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DSK10T3 | 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50DDAM65T3G | 功能描述:MOSFET MOD DUAL BOOST CHOP SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50DHM35 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM50DHM35G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50DHM38 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM50DHM38G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。