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參數(shù)資料
| 型號： | APTM50DAM17 |
| 元件分類： | JFETs |
| 英文描述： | 180 A, 500 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 285K |
| 代理商： | APTM50DAM17 |
APTM50DAM17
A
PT
M
50D
A
M
17
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
40
80
120
160
200
240
280
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
40
80
120
160
200
240
280
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
12
40
80
120
160
200
240
280
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Eon
Eoff
0
4
8
12
16
20
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=180A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
450
20
40
60
80 100 120 140 160
ID, Drain Current (A)
F
req
ue
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=0.5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM50DAM17G | 功能描述:MOSFET N-CH 500V 180A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTM50DAM19G | 功能描述:MOSFET N-CH 500V 163A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTM50DAM35TG | 功能描述:MOSFET N-CH 500V 99A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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