參數(shù)資料
型號(hào)： APTM50AM38STG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 90 A, 500 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP4, MODULE-10
文件頁數(shù)： 2/7頁
文件大?。?/td> 290K
代理商： APTM50AM38STG
APTM50AM38STG
A
P
T
M
50A
M
38S
T
G
–
R
ev
5
J
ul
y,
2006
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 45A
38
45
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
11.2
Coss
Output Capacitance
2.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.18
nF
Qg
Total gate Charge
246
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A
130
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2
77
ns
Eon
Turn-on Switching Energy
1510
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1452
J
Eon
Turn-on Switching Energy
2482
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1692
J
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
500
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
750
A
IF
DC Forward Current
Tc = 85°C
90
A
IF = 90A
1.1
1.15
IF = 180A
1.4
VF
Diode Forward Voltage
IF = 90A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
99
Qrr
Reverse Recovery Charge
IF = 90A
VR = 133V
di/dt = 600A/s
Tj = 125°C
450
nC
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