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參數(shù)資料
| 型號： | APTM50AM38SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-10 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 315K |
| 代理商： | APTM50AM38SCT |
APTM50AM38SCT
A
PT
M
50A
M
38S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
er
m
a
lIm
p
ed
an
ce
(°
C/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
25
50
75
100
00.5
1
1.5
22.5
3
3.5
VF Forward Voltage (V)
I F
Fo
rw
a
rd
C
u
rr
e
nt
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
200
400
600
800
1000
200
300
400
500
600
700
800
VR Reverse Voltage (V)
I R
Re
ve
rs
eCu
rre
n
t(A)
Capacitance vs.Reverse Voltage
0
500
1000
1500
2000
1
10
100
1000
VR Reverse Voltage
C
,C
apaci
ta
nce
(pF)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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