參數(shù)資料
型號: APTM50AM38SCT
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-10
文件頁數(shù): 2/7頁
文件大?。?/td> 315K
代理商: APTM50AM38SCT
APTM50AM38SCT
A
PT
M
50A
M
38S
C
T
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 45A
38
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
11.2
Coss
Output Capacitance
2.36
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.17
nF
Qg
Total gate Charge
246
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A
130
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2
W
77
ns
Eon
Turn-on Switching Energy
906
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1452
J
Eon
Turn-on Switching Energy
1491
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1692
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
90
A
IF = 90A
1.1
1.15
IF = 180A
1.4
VF
Diode Forward Voltage
IF = 90A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 90A
VR = 133V
di/dt = 600A/s
Tj = 125°C
48
ns
Tj = 25°C
99
Qrr
Reverse Recovery Charge
IF = 90A
VR = 133V
di/dt = 600A/s
Tj = 125°C
450
nC
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