- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51277 > APTM50AM19ST (MICROSEMI POWER PRODUCTS GROUP) 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTM50AM19ST |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-9 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 305K |
| 代理商： | APTM50AM19ST |
APTM50AM19ST
A
PT
M
50A
M
19S
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
7 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
60
100
140
180
220
260
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
60
100
140
180
220
260
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
0
20406080 100 120 140
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
20
60
100
140
180
220
260
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=1
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
12
14
16
02.557.5
10
12.5
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=170A
TJ=125°C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM35FT | 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM35FT | 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50AM19STG | 功能描述:MOSFET MOD PHASELEG SER/SIC LP8W RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50AM24S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
| APTM50AM24SC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
| APTM50AM24SCG | 功能描述:MOSFET MOD PHASE LEG SER/SIC SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50AM24SG | 功能描述:PWR MODULE MOSFET 500V 150A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。