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參數(shù)資料
| 型號： | APTM50AM19ST |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-9 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 305K |
| 代理商： | APTM50AM19ST |
APTM50AM19ST
A
PT
M
50A
M
19S
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
rai
n
t
o
So
ur
ce
B
rea
kd
ow
n
V
o
lt
ag
e
(
N
or
ma
li
zed
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
re
si
st
an
ce
(No
rm
a
li
ze
d
)
VGS=10V
ID=85A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
a
g
e
(No
rm
al
iz
e
d
)
limited by RDSon
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
limited by R
DSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
ac
ita
n
c
e(p
F
)
Capacitance vs Drain to Source Voltage
VCE=100V
VCE=250V
VCE=400V
0
2
4
6
8
10
12
14
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
,
G
at
e
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=170A
TJ=25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM24S | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM35FT | 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM35FT | 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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