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參數(shù)資料
| 型號(hào)： | APTM100DA18T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大小： | 145K |
| 代理商： | APTM100DA18T1G |
APTM100DA18T1G
APT
M
100DA18T1G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
5 – 5
Typical Diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Thermal
Im
peda
nce
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF, Anode to Cathode Voltage (V)
I F
,Forwa
rd
C
u
rre
nt
(A
)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
30 A
60 A
120 A
0
100
200
300
400
0
200
400
600
800
1000 1200
-diF/dt (A/s)
t rr
,R
e
v
ers
e
R
ecov
e
ry
Tim
e
(
n
s)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
30 A
60 A
120 A
0
1
2
3
4
5
6
7
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Q
RR
,R
e
v
ers
e
Re
cov
ery
C
h
a
rge
(
C
)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
10
20
30
40
50
0
200
400
600
800
1000 1200
-diF/dt (A/s)
I RR
M
,R
e
v
ers
e
Re
cov
ery
C
u
rre
nt
(A
)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
100
200
300
400
1
10
100
1000
VR, Reverse Voltage (V)
C
,C
a
pac
it
a
nc
e
(pF)
0
20
40
60
80
100
25
50
75
100
125
150
175
Case Temperature (C)
I F
(AV
)(A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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