- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51276 > APTM100DA18T1G (MICROSEMI POWER PRODUCTS GROUP) 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM100DA18T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | APTM100DA18T1G |
APTM100DA18T1G
APT
M
100DA18T1G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 33A
180
216
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14800
Coss
Output Capacitance
1555
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
196
pF
Qg
Total gate Charge
570
Qgs
Gate – Source Charge
100
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 33A
270
nC
Td(on)
Turn-on Delay Time
85
Tr
Rise Time
75
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 33A
RG = 2.2Ω
70
ns
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
2.5
3
IF = 120A
3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
560
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/s
Tj = 125°C
2890
nC
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Transistor
0.19
RthJC
Junction to Case Thermal Resistance
Diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque
Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
相關PDF資料 |
PDF描述 |
|---|---|
| APTM100H35FT3 | 22 A, 1000 V, 0.42 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H35FT3 | 22 A, 1000 V, 0.42 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H45FT3 | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H45FT3 | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H45STG | 18 A, 1000 V, 0.54 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100DA18TG | 功能描述:MOSFET N-CH 1000V 43A SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA33T1G | 功能描述:MOSFET N-CH 1000V 23A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA40T1G | 功能描述:MOSFET N-CH 1000V 20A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DAM90 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
| APTM100DAM90G | 功能描述:MOSFET N-CH 1000V 78A SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復。