參數(shù)資料
型號(hào)： APTGT75X120E3
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 100 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-33
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 225K
代理商： APTGT75X120E3
APTGT75X120E3
A
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APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 5mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 3 mA
5.0
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
5340
Coes
Output Capacitance
280
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
240
pF
Td(on)
Turn-on Delay Time
260
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
70
ns
Td(on)
Turn-on Delay Time
285
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
9.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
3
Er
Reverse Recovery Energy
IF = 75A
VR = 600V
di/dt =825A/s Tj = 125°C
6
mJ
Tj = 25°C
7.6
Qrr
Reverse Recovery Charge
IF = 75A
VR = 600V
di/dt =825A/s Tj = 125°C
13.7
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.35
RthJC
Junction to Case
Diode
0.58
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
相關(guān)PDF資料
PDF描述
APTGT75X120E3 100 A, 1200 V, N-CHANNEL IGBT
APTGT75X120TE3 100 A, 1200 V, N-CHANNEL IGBT
APTGT75X120TE3G 100 A, 1200 V, N-CHANNEL IGBT
APTGT75X120TE3 100 A, 1200 V, N-CHANNEL IGBT
APTGU120SK120T 180 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT75X120E3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT75X120RTP3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT75X120RTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT75X120TE3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge Trench IGBT Power Module
APTGT75X120TE3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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