參數(shù)資料
型號(hào): APTGT580U60D4G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: IGBT
封裝: ROHS COMPLIANT, D4, 5 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 196K
代理商: APTGT580U60D4G
APTGT580U60D4G
APT
G
T
580U60D4
G
Rev
0
July,
2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
760
IC
Continuous Collector Current
TC = 80°C
580
ICM
Pulsed Collector Current
TC = 25°C
800
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
1600
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
1200A@550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 600V
IC = 600A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
Trench + Field Stop IGBT
Power Module
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