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參數(shù)資料
| 型號： | APTGT50TL601G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 226K |
| 代理商： | APTGT50TL601G |
APTGT50TL601G
APT
G
T
50T
L
601G–
Rev0
M
ar
ch,
2
009
www.microsemi.com
5- 7
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
00.5
11.5
22.5
3
VCE (V)
I C
(A)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
I C
(A)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=150°C
0
20
40
60
80
100
5
6
7
8
9
101112
VGE (V)
I C
(A)
Energy losses vs Collector Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
IC (A)
E
(
m
J
)
VCE = 300V
VGE = 15V
RG = 8.2
TJ = 150°C
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
15
253545
5565
Gate Resistance (ohms)
E
(
m
J
)
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
0
100 200 300 400 500 600 700
VCE (V)
I C
(A)
VGE=15V
TJ=150°C
RG=8.2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
rma
lImpe
da
nc
e
(
°C
/W
)
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