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參數(shù)資料
| 型號(hào)： | APTGT50TL601G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | APTGT50TL601G |
APTGT50TL601G
APT
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T
50T
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601G–
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ar
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www.microsemi.com
3- 7
CR1 to CR4 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
A
IF
DC Forward Current
Tc = 80°C
30
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 30A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
1.5
Qrr
Reverse Recovery Charge
Tj = 150°C
3.1
C
Tj = 25°C
0.34
Err
Reverse Recovery Energy
IF = 30A
VR = 300V
di/dt =1800A/s
Tj = 150°C
0.75
mJ
RthJC
Junction to Case Thermal Resistance
2.45
°C/W
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
A
IF
DC Forward current
Tc = 80°C
50
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
2.6
Qrr
Reverse Recovery Charge
Tj = 150°C
5.4
C
Tj = 25°C
0.60
Err
Reverse Recovery Energy
IF = 50A
VR = 300V
di/dt =1800A/s
Tj = 150°C
1.20
mJ
RthJC
Junction to Case Thermal Resistance
1.42
°C/W
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
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