- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36737 > APTGT50TDU60P 80 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT50TDU60P |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-21 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 284K |
| 代理商： | APTGT50TDU60P |
APTGT50TDU60P
A
P
T
G
T
50
T
D
U
60P
–
R
ev
0,
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
80
IC
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
176
W
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
VCES = 600V
IC = 50A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple Dual Common Source
Trench + Field Stop IGBT
Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3G | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X170BTP3G | 45 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
| APTGT50X170BTP3 | 70 A, 1700 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50TDU60PG | 功能描述:IGBT MOD TRIPLE DUAL SOURCE SP6P RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50TL601G | 功能描述:POWER MODULE IGBT 600V 50A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50TL60T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Three level inverter Trench + Field Stop IGBT Power Module |
| APTGT50X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。