參數(shù)資料
型號: APTGT50DSK60T3
廠商: Advanced Power Technology Ltd.
英文描述: Dual Buck chopper Trench + Field Stop IGBT Power Module
中文描述: 雙降壓斬波器戴場站IGBT功率模塊
文件頁數(shù): 2/5頁
文件大小: 293K
代理商: APTGT50DSK60T3
APTGT50DSK60T3
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 600μA
V
GE
= 20V, V
CE
= 0V
250
1.9
6.5
600
μA
T
j
= 25°C
T
j
= 150°C
1.5
1.7
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
5.0
V
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
3150
200
95
110
45
200
40
120
50
250
60
0.87
1.75
V
GE
= 0V
V
CE
= 25V
f = 1MHz
pF
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 10
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 10
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
50
1.6
1.5
125
220
2.6
5.4
Max
250
500
2
Unit
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 50A
V
GE
= 0V
A
V
V
F
Diode Forward Voltage
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 50A
V
R
= 300V
di/dt =1800A/μs
μC
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相關代理商/技術參數(shù)
參數(shù)描述
APTGT50DSK60T3G 功能描述:IGBT MOD TRENCH DL BUCK CHOP SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGT50DU120T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Fast Trench + Field Stop IGBT Power Module
APTGT50DU120TG 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGT50DU170T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module
APTGT50DU170TG 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B