- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51274 > APTGT35H120T3 (MICROSEMI POWER PRODUCTS GROUP) 55 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT35H120T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 55 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 293K |
| 代理商： | APTGT35H120T3 |
APTGT35H120T3
A
P
T
G
T
35
H
120T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.7
2.1
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 35A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2.5
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.15
nF
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
70
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eon
Turn-on Switching Energy
3.5
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
4.1
mJ
Eon includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
30
A
IF = 30A
2.0
2.5
IF = 60A
2.3
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
370
trr
Reverse Recovery Time
Tj = 125°C
500
ns
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
3450
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT400A60D3G | IGBT |
| APTGT400DA120D3G | IGBT |
| APTGT400U120D4 | 600 A, 1200 V, N-CHANNEL IGBT |
| APTGT400U120D4 | 600 A, 1200 V, N-CHANNEL IGBT |
| APTGT400U170D4G | 800 A, 1700 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT35H120T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT35SK120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT35SK120D1G | 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT35X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。