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參數(shù)資料
| 型號： | APTGT150SK120D1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 220 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT PACKAGE-7 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 179K |
| 代理商： | APTGT150SK120D1G |
APTGT150SK120D1G
APTG
T150SK120
D1G
–
Rev
2
D
ecem
ber,
2009
www.microsemi.com
2- 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
A
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 150A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 6 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
10.8
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.5
nF
QG
Gate charge
VGE=±15V, IC=150A
VCE=600V
1.4
C
Td(on)
Turn-on Delay Time
250
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
130
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
180
ns
Eon
Turn on Energy
Tj = 125°C
11
Eoff
Turn off Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
Tj = 125°C
26
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
600
A
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward current
Tc = 80°C
150
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
250
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
15
Qrr
Reverse Recovery Charge
Tj = 125°C
29
C
Tj = 25°C
7
Err
Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =3000A/s
Tj = 125°C
12
mJ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150SK120D3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT150SK120DY | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK120G | 功能描述:IGBT 1200V 220A 690W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150SK120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Fast Trench + Field Stop IGBT Power Module |
| APTGT150SK120TG | 功能描述:IGBT 1200V 220A 690W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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