參數(shù)資料
型號： APTGT100X120TE3
元件分類： IGBT 晶體管
英文描述： 140 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-35
文件頁數(shù)： 2/3頁
文件大?。?/td> 232K
代理商： APTGT100X120TE3
APTGT100X120TE3
A
PT
G
T
10
0X
12
0T
E
3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 5mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 100A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 4 mA
5.0
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
7200
Coes
Output Capacitance
400
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
300
pF
Td(on)
Turn-on Delay Time
260
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
70
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
12
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
5
Er
Reverse Recovery Energy
IF = 100A
VR = 600V
di/dt =900A/s Tj = 125°C
9
mJ
Tj = 25°C
10
Qrr
Reverse Recovery Charge
IF = 100A
VR = 600V
di/dt =900A/s Tj = 125°C
19
C
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
T: Thermistor temperature
RT: Thermistor value at T
相關(guān)PDF資料
PDF描述
APTGT150A120D1 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120D1 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120T3AG 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120T 220 A, 1200 V, N-CHANNEL IGBT
APTGT150A120T 220 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT100X120TEG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT150A120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT150A1202G 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2
APTGT150A120D1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module
APTGT150A120D1G 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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