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參數(shù)資料
| 型號(hào)： | APTGS25X120RTP2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動(dòng)三相IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 189K |
| 代理商： | APTGS25X120RTP2 |
APTGS25X120RTP2
APTGS25X120BTP2
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGS25X120BTP2)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
1200
20
12.5
25
±20
100
25
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
45
25
50
±20
230
160A @ 720V
25
50
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
I
F
I
FSM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
A
V
W
t
p
= 1ms
A
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
Test Conditions
V
R
= 1600V
I
F
= 30A
I
F
= 25A
Min
Typ
2
1.3
1.05
Max
1.5
1.1
1
Unit
mA
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
IGBT Brake & Diode
(only for APTGS25X120BTP2)
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 1200V
Min
4.5
Typ
0.5
0.8
2.7
3.1
5.5
Max
500
3.15
6.5
300
Unit
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 12.5A
V
GE
= V
CE
, I
C
= 0.35 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 25A
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
600
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
2.05
1.9
2.4
1.2
1.2
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| APTGS50X170E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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| APTGS50X170E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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