參數(shù)資料
型號: APTGF90SK60T3AG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 130 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 1/5頁
文件大小: 202K
代理商: APTGF90SK60T3AG
APTGF90SK60T3AG
APT
G
F90SK60T
3AG
Rev
0
M
ay,
2009
www.microsemi.com
1 – 5
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
130
IC
Continuous Collector Current
TC = 100°C
90
ICM
Pulsed Collector Current
TC = 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
520
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
200A @ 480V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Buck chopper
NPT IGBT Power Module
Power Module
VCES = 600V
IC = 90A @ Tc = 100°C
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