參數(shù)資料
型號： APTGL180A120T3AG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 230 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 197K
代理商： APTGL180A120T3AG
APTGL180A120T3AG
A
P
TGL180A120T
3A
G
–
Re
v2
M
arc
h,
2011
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
230
IC
Continuous Collector Current
TC = 100°C
180
ICM
Pulsed Collector Current
TC = 25°C
300
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
940
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
29
13
30 31
32
R1
23
22
28
25
27
26
7
8
3
4
18
16
20
19
14
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
VCES = 1200V
IC = 180A @ Tc = 100°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
-
Low voltage drop
-
Low leakage current
-
Low switching losses
-
Soft recovery parallel diodes
-
Low diode VF
-
RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase leg
Trench + Field Stop IGBT4
Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGL180A120T3AG_11 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT4 Power Module
APTGL240TL120G 功能描述:POWER MOD IGBT4 3LVL INVERT SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設(shè)備封裝:SOT-227B
APTGL30H120T1G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full bridge Trench + Field Stop IGBT4 Power Module
APTGL30X120T3G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 Phase bridge Trench + Field Stop IGBT4 Power Module
APTGL325A120D3G 功能描述:IGBT4 PHASE LEG 1200V 420A D3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設(shè)備封裝:SOT-227B
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