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參數(shù)資料
| 型號(hào)： | APTGF50VDA60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 65 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 223K |
| 代理商： | APTGF50VDA60T3G |
APTGF50VDA60T3G
APTGF50VDA60
T
3G
–
Rev
1
S
eptem
ber,
2009
www.microsemi.com
4 – 6
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
0123
4
Ic,
C
o
llector
Cu
rren
t(A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
012
3456
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Ic,
Co
llector
Cur
rent
(A)
250s Pulse Test
< 0.5% Duty cycle
0.80
0.90
1.00
1.10
1.20
25
50
75
100
125
TJ, Junction Temperature (°C)
C
o
llec
tor
t
o
Emit
te
rB
re
a
k
d
o
w
n
V
olt
ag
e
(
N
o
rma
lized
)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
25
50
75
100
125
150
TC, Case Temperature (°C)
Ic
,D
C
o
ll
e
c
tor
C
u
rr
e
n
t(
A
)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100 125 150 175 200
Gate Charge (nC)
V
GE
,G
a
te
t
o
E
m
it
te
rVo
lt
a
g
e
(
V
)
IC = 50A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
25
50
75
100
0
1
234
Ic,
C
o
lle
ct
o
rC
u
rre
n
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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