參數(shù)資料
型號: APTGF50VDA60T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 65 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 223K
代理商: APTGF50VDA60T3G
APTGF50VDA60T3G
APTGF50VDA60
T
3G
Rev
1
S
eptem
ber,
2009
www.microsemi.com
1 – 6
4
3
16
8
23
22
31
30
32
29
NTC
26
27
15
19
13
20
10
11
14
7
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
65
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS compliant
Dual Boost Chopper
NPT IGBT Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
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