參數(shù)資料
型號(hào)： APTGF165SK60D1
廠商： Advanced Power Technology Ltd.
英文描述： Buck chopper NPT IGBT Power Module
中文描述： 降壓斬波器不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 138K
代理商： APTGF165SK60D1
APTGF165SK60D1
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 5 mA
T
j
= 25°C
Zero Gate Voltage Collector Current
V
CE
= 600V
V
GE
= 15V
I
C
= 200A
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 4 mA
Gate – Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
Min
600
4.5
Typ
1
1
2.0
2.2
Max
500
2.5
6.5
400
Unit
V
μA
mA
I
CES
V
GE
= 0V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
Min
Typ
9000
800
165
40
250
35
180
50
285
40
6.3
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 200A
V
GE
= 0V
I
F
= 200A
V
R
= 300V
di/dt =900A/μs
I
F
= 200A
V
= 300V
di/dt =900A/μs T
j
= 125°C
Min
Typ
1.25
1.2
Max
1.6
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
4.1
mJ
T
j
= 25°C
12
Q
rr
Reverse Recovery Charge
19
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.17
0.29
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF165SK60D1G 功能描述:IGBT 600V 230A 730W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF180A60D3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF180A60T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module
APTGF180A60TG 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF180DA60D3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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