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參數(shù)資料
| 型號： | APTGF15X60BTP2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動三相IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 188K |
| 代理商： | APTGF15X60BTP2 |
APTGF15X60RTP2
APTGF15X60BTP2
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGF15X60BTP2)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
600
20
10
25
±20
80
10
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
25
15
37
±20
100
65A @ 360V
15
30
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
I
F
I
FSM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
A
V
W
t
p
= 1ms
A
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
Test Conditions
V
R
= 1600V
I
F
= 30A
I
F
= 15A
Min
Typ
2
1.3
0.95
Max
1.5
1
1
Unit
mA
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
IGBT Brake & Diode
(only for APTGF15X60BTP2)
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 600V
Min
4.5
Typ
0.5
0.8
1.95
2.2
5.5
Max
500
2.35
6.5
300
Unit
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 10A
V
GE
= V
CE
, I
C
= 0.35 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 15A
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
600
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
1.25
1.2
1.70
1.5
1.8
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
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PDF描述 |
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| APTGF10X60BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF10X60RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF165DA60D1 | Boost Chopper NPT IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF15X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X60RTP2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF15X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF165A60D1G | 功能描述:IGBT NPT PHASE 600V 230A D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF165DA60D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
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