參數(shù)資料
型號: APTGF150A120T3AG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 210 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 198K
代理商: APTGF150A120T3AG
APTGF150A120T3AG
APT
G
F150A120T
3AG
Rev
0
July,
2008
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
A
Tj = 25°C
3.2
3.7
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 150A
Tj = 125°C
3.9
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 6mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9.3
Coes
Output Capacitance
1.4
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.7
nF
QG
Gate charge
VGE= ±15V ; VCE=600V
IC=150A
1.6
C
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
310
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 5.6Ω
20
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 5.6Ω
30
ns
Eon
Turn-on Switching Energy
Tj = 125°C
18
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 5.6Ω
Tj = 125°C
8
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
900
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
600
A
IF
DC Forward Current
Tc = 100°C
120
A
IF = 120A
2.5
3
IF = 240A
3
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
1120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt =400A/s
Tj = 125°C
5780
nC
相關(guān)PDF資料
PDF描述
APTGF150A120T3WG 210 A, 1200 V, N-CHANNEL IGBT
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