- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36728 > APTC60DAM18CTG (MICROSEMI CORP) 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTC60DAM18CTG |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 313K |
| 代理商： | APTC60DAM18CTG |
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
–
R
ev
3
J
ul
y,
2006
www.microsemi.com
1 – 7
CR1
VBUS
NTC2
0/VBU S
VBUS SENSE
G2
S2
NTC1
Q2
OUT
VBUS
OUT
NTC2
NTC1
0/VBUS
S2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
143
ID
Continuous Drain Current
Tc = 80°C
107
IDM
Pulsed Drain current
572
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
18
m
PD
Maximum Power Dissipation
Tc = 25°C
833
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 18m max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
FWD SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC60DAM18CTG | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DAM18CTG | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DAM18CT | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DAM18CT | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM35T3 | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60DAM24CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DAM24T1G | 功能描述:MOSFET N-CH 600V 95A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60DAM35T1G | 功能描述:MOSFET N-CH 600V 72A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60DDAM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60DDAM35T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。