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參數(shù)資料
| 型號： | APTC60DAM18CT |
| 元件分類： | JFETs |
| 英文描述： | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 318K |
| 代理商： | APTC60DAM18CT |
APTC60DAM18CT
A
PT
C
60D
A
M
18C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
CR1
VBUS
NTC2
0/VBUS
VBUS SENSE
G2
S2
NTC1
Q2
OUT
VBUS
OUT
NTC2
NTC1
0/VBUS
S2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
143
ID
Continuous Drain Current
Tc = 80°C
107
IDM
Pulsed Drain current
572
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
18
m
W
PD
Maximum Power Dissipation
Tc = 25°C
833
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 18m
W max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
FWD SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
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| APTC60DAM18CTG | 功能描述:MOSFET N-CH 600V 143A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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| APTC60DAM35T1G | 功能描述:MOSFET N-CH 600V 72A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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