- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄64116 > APT94N65B2C3 (MICROSEMI POWER PRODUCTS GROUP) 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT94N65B2C3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | APT94N65B2C3 |
050-8069
Rev
B
3-2009
Typical Performance Curves
APT94N65B2C3(G)
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
0
10
20
30
40
50
0
50
00
50
00
50
00
0
40
80
120
160
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
100
200
300
400
500
600
700
0
40
80
120
160
0
2
4
6
8
10
12
0
200
400
600
800
10
100
1,000
10,000
60,000
0
100
200
300
400
500
600
C
iss
T
J = =25°C
GRAPH REMOVED
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 12, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 14, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 13, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 15 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 17, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
2000
4000
6000
8000
10000
12000
0
25
50
75
100
125
150
I
D (A)
FIGURE 16, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 94A
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 94A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Maximum Safe Operating Area
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTCV90TL12T3G | 80 A, 1200 V, N-CHANNEL IGBT |
| APTGF180SK60TG | 220 A, 600 V, N-CHANNEL IGBT |
| APTGF50DA120T1G | 75 A, 1200 V, N-CHANNEL IGBT |
| APTGF50DDA60T3G | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50H120TG | 75 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):上次購買時間 IGBT 類型:NPT 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:135A 脈沖電流 - 集電極 (Icm):380A 不同?Vge，Ic 時的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 開關(guān)能量:* 輸入類型:標準 柵極電荷:420nC 25°C 時 Td（開/關(guān)）值:29ns/226ns 測試條件:433V，95A，4.3 歐姆，15V 反向恢復(fù)時間（trr）:- 封裝/外殼:SOT-227-4，miniBLOC 安裝類型:底座安裝 供應(yīng)商器件封裝:SOT-227 標準包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。