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參數(shù)資料
| 型號： | APT94N65B2C3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | APT94N65B2C3 |
050-8069
Rev
B
3-2009
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.0618
0.0885
0.0230
0.436
Typical Performance Curves
APT94N65B2C3(G)
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
0.
.95
1
.05
1. 1
.15
-50
0
50
100
150
0.8
0.9
1
1.1
1.2
1.3
1.4
0
40
80
120
160
200
0
10
20
30
40
50
60
70
80
90
100
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
0
5
10
15
20
25
30
6.5V
4V
10 &15V
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 12, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 6, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 13, R
DS(ON) vs Drain Current
I DR
,REVERSE
T
J, Junction Temperature (°C)
FIGURE 7, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 9, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.5
1
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 8, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
4.5V
5.5V
6V
5V
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 47A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):上次購買時間 IGBT 類型:NPT 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:135A 脈沖電流 - 集電極 (Icm):380A 不同?Vge，Ic 時的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 開關(guān)能量:* 輸入類型:標(biāo)準(zhǔn) 柵極電荷:420nC 25°C 時 Td（開/關(guān)）值:29ns/226ns 測試條件:433V，95A，4.3 歐姆，15V 反向恢復(fù)時間（trr）:- 封裝/外殼:SOT-227-4，miniBLOC 安裝類型:底座安裝 供應(yīng)商器件封裝:SOT-227 標(biāo)準(zhǔn)包裝:1 |
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