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參數(shù)資料
| 型號： | APT8075BN |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 93K |
| 代理商： | APT8075BN |
2SA1962
2006-11-09
4
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
相關PDF資料 |
PDF描述 |
|---|---|
| APT8090BN | 12 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFRG | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFR | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFR | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075SN | 13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT8075BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 13A I(D) | TO-247AD |
| APT8075BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8075BVFR_05 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8075BVFRG | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT8075BVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247 |
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