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參數(shù)資料
| 型號： | APT8075BN |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | APT8075BN |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-8007
Rev
C
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230 SEC. PULSE TEST
2.5
20
0
2
4
68
8
16
12
0.7
0.9
0.8
1.0
1.1
1.2
0
25
50
75
100
125
150
0.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.0
4
8
16
12
4
0.6
0.4
1.4
0.8
1.0
1.2
0
TJ = -55°C
T
J
= +25°C
T
J
= +125°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
2
46
8
10
12
4.5V
4V
5V
5.5V
6V
16
8
0
4
12
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
V
GS
=10V
VGS=20V
0
10
20
30
40
4
8
12
16
APT8090BN
APT8075BN
0
50
100
150
200
250
V
GS
=6V &10V
4V
4.5V
5V
5.5V
V
GS
=10V
APT8075/8090BN
I
D = 0.5 ID [Cont.]
V
GS = 10V
T
J = 25°C
2 SEC. PULSE TEST
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
Page 146
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT8090BN | 12 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFRG | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFR | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075BVFR | 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8075SN | 13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8075BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 13A I(D) | TO-247AD |
| APT8075BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8075BVFR_05 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8075BVFRG | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT8075BVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247 |
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