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參數(shù)資料
| 型號： | APT8052BLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 800 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 160K |
| 代理商： | APT8052BLL |
APTGF180A60TG
A
P
T
G
F
180
A
60T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
5 - 6
VGE = 15V
15
20
25
30
35
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
td
(on)
,Turn-
O
n
D
el
ay
Ti
m
e(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 2.5
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
td
(o
ff)
,T
u
rn
-O
ff
D
e
la
yT
im
e
(n
s)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.5
VGE=15V,
TJ=125°C
0
20
40
60
80
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
tr
,R
is
eT
im
e(n
s
)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.5
TJ = 25°C
TJ = 125°C
0
20
40
60
80
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
tf
,F
all
T
im
e(
n
s)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.5
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
E
on
,Turn-
O
n
E
n
er
gy
Los
s(
m
J
)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.5
TJ = 25°C
TJ = 125°C
0
2
4
6
8
10
12
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
E
of
f,
Tu
rn-
o
ff
E
n
er
gy
Los
s
(m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.5
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
8
16
24
32
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
ch
in
g
E
n
er
g
yL
o
ss
es
(m
J
)
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
4
8
12
16
20
0
25
50
75
100
125
TJ, Junction Temperature (°C)
S
w
it
ch
in
g
E
n
e
rg
y
L
o
s
ses
(
m
J)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 2.5
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| APT8056BVR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT8056BVR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT8065BVFRG | 13 A, 800 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8052BLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8052BLLG | 功能描述:MOSFET N-CH 800V 15A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT8052SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8052SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT8052SLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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