- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36727 > APT8052BLL (MICROSEMI POWER PRODUCTS GROUP) 15 A, 800 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT8052BLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 800 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 160K |
| 代理商： | APT8052BLL |
APTGF180A60TG
A
P
T
G
F
180
A
60T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
300
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1000
A
Tj = 25°C
2.0
2.5
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 180A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = 20 V, VCE = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
8.6
Coes
Output Capacitance
0.94
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.8
nF
Qg
Total gate Charge
660
Qge
Gate – Emitter Charge
580
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 180A
400
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5
30
ns
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
8.6
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5
Tj = 125°C
7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
1500
A
IF
DC Forward Current
Tc = 70°C
120
A
IF = 120A
1.6
1.8
IF = 240A
1.9
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.4
V
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
520
Qrr
Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt =800A/s
Tj = 125°C
2800
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT8056BVFR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8056BVFR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8056BVR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT8056BVR | 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT8065BVFRG | 13 A, 800 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8052BLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8052BLLG | 功能描述:MOSFET N-CH 800V 15A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT8052SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8052SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT8052SLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。