參數(shù)資料
型號(hào): APT75GN60LDQ3G
廠商: Advanced Power Technology Ltd.
英文描述: IGBT
中文描述: IGBT的
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 443K
代理商: APT75GN60LDQ3G
0
APT75GN60LDQ3(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
400V
R
=
1.0
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
400V
V
CE
= 400V
T
J
= 25°C
,
or
=125°C
R
= 1.0
L = 100 μH
5
25
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
40
35
30
25
20
15
10
5
0
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
V
GE
= 15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
45
65
85
105 125 145 165
5
25
45
65
85
105 125 145 165
5
25
45
65
85
105 125 145 165
5
25
45
65
85
105 125 145 165
5
25
45
65
85
105 125 145 165
5
25
45
65
85
105 125 145 165
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
400V
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
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