參數(shù)資料
型號(hào): APT60N60SCS
廠商: Advanced Power Technology Ltd.
英文描述: Super Junction MOSFET
中文描述: 超級(jí)結(jié)MOSFET的
文件頁數(shù): 3/5頁
文件大?。?/td> 411K
代理商: APT60N60SCS
0
Typical Performance Curves
APT60N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
5V
5.5V
6.5V
15, 10 & 7V
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
= 44A
V
GS
= 10V
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T
J
= -55°C
T
J
= +25°C
T
J
= +125°C
NORMALIZED TO
V
GS
= 10V @ 44A
V
GS
=10V
V
GS
=20V
200
180
160
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.0
1.5
1.0
0.5
0
4.5V
6V
0.143
0.233
0.00391
0.00717
0.120
0.680
Power
(watts)
Junction
temp. (
°
C)
RC MODEL
Case temperature. (
°
C)
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