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參數(shù)資料
| 型號： | APT60N60BCSG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級結MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 411K |
| 代理商： | APT60N60BCSG |
0
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.05
0.3
0.7
D = 0.9
WITH MOS 7 FORMAT
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
APT Reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Turn-off Switching Energy
APT60N60B_SCS(G)
TYP
MAX
7200
8500
290
150
190
34
50
30
20
100
10
675
Symbol
R
θ
JC
R
θ
JA
1
Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as
P
AV
= E
AR
*f
3
Starting T
j
=
+25°C, L = 33.23mH, R
G
=
25
, Peak I
L
= 11A
4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2%
MIN
TYP
MAX
0.29
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 400V
I
D
= 44A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
400V
I
D
=
44A
@ 25°C
R
G
=
3.3
INDUCTIVE SWITCHING @ 25°C
V
DD
=
400V, V
GS
= 15V
I
D
=
44A, R
G
=
4.3
INDUCTIVE SWITCHING @ 125°C
V
DD
=
400V, V
GS
= 15V
I
D
=
44A, R
G
=
4.3
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7
We do not recommend using this CoolMOS product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
MIN
520
1100
635
UNIT
pF
nC
ns
μ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
4
(V
GS
= 0V, I
S
= -
44A
)
Reverse Recovery Time (I
S
= -
44A
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -
44A
, dl
S
/dt = 100A/μs)
Peak Diode Recovery
dv
/
dt
7
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
44
180
1.2
600
17
4
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
THERMAL CHARACTERISTICS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N90JC3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT60S20B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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