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參數(shù)資料
| 型號： | APT60N60BCS |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級結MOSFET的 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 411K |
| 代理商： | APT60N60BCS |
0
Typical Performance Curves
APT60N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
t
d(on)
90%
5%
t
r
10%
APT60DQ60
ID
VDS
D.U.T.
V
DD
G
Figure 20, Inductive Switching Test Circuit
T
J
125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
90%
Drain Voltage
Gate Voltage
Drain Current
Switching Energy
TO
-
247 Package Outline
D
3
PAK Package Outline
e3
e1 SAC: Tin, Silver, Copper
100% Sn
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
{3 Plcs}
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
3.81 (.150)
D
(
1.98 (.078)
Gate
Drain
Source
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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| APT60N60SCS | Super Junction MOSFET |
| APT60N60SCSG | Super Junction MOSFET |
| APT65GP60B2 | POWER MOS 7 IGBT |
| APT65GP60JDQ2 | POWER MOS 7 IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N90JC3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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