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參數(shù)資料
| 型號： | APT60N60BCS |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級結(jié)MOSFET的 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 411K |
| 代理商： | APT60N60BCS |
0
APT60N60B_SCS(G)
h the place command
T
C
=+25°C
T
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
C
rss
C
iss
C
oss
V
G
,
I
D
,
I
D
,
C
230
100
50
10
5
1
16
14
12
10
8
6
4
2
0
10
5
10
4
10
3
10
2
10
1
10
0
200
100
10
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
250
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
110
100μS
1mS
10mS
S
t
d
d
t
r
f
(
E
on
E
off
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
I
(A)
R
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
FIGURE 16, SWITCHING ENERGY vs CURRENT
T
J
=+150°C
T
J
=+25°C
I
D
= 44A
t
d(on)
t
d(off)
V
DD
= 400V
R
G
= 4.3
T
= 125°C
L = 100μH
V
DD
= 400V
R
G
= 4.3
T
= 125°C
L = 100μH
E
on
includes
diode reverse recovery.
V
DD
= 400V
R
G
= 4.3
T
= 125°C
L = 100μH
t
r
t
f
0
20
40
60
80
0
20
40
60
80
0
20
40
60
80
0
5
10 15 20 25 30 35 40 45 50
1
10
100
600
0
50
100
150
200
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
DS
=300V
V
DS
=120V
V
DS
=480V
200
150
100
50
0
2000
1500
1000
500
0
E
on
E
off
100
90
80
70
60
50
40
30
20
10
0
2000
1500
1000
500
0
V
DD
= 400V
I
D
= 44A
T
= 125°C
L = 100μH
E
on
includes
diode reverse recovery.
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| APT60N60SCSG | Super Junction MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N90JC3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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