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參數(shù)資料
| 型號： | APT54H50L |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 262K |
| 代理商： | APT54H50L |
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-264 (L) Package Outline
T-MAX (B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
D
ra
in
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
ra
in
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
0.0337
0.0687
0.0575
0.000713
0.0189
0.527
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
DC line
100s
I
DM
10ms
13s
100s
I
DM
100ms
10ms
13s
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
T
J = 125°C
T
C = 75°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
Figure 11, Transient Thermal Impedance Model
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
I D
,DRAIN
CURRENT
(A)
1
10
100
600
1
10
100
600
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
200
100
10
1
0.1
200
100
10
1
0.1
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
APT54H50B2_L
050-8120
Rev
A
5-2007
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT54H50B2 | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT5510B2FLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510B2FLLG | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510LFLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5510LFLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APT55-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP |
| APT5510B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5510JFLL | 功能描述:MOSFET N-CH 550V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT5510LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5513B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
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