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參數(shù)資料
| 型號(hào)： | APT54H50L |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 262K |
| 代理商： | APT54H50L |
VGS= 7 & 10V
5.5V
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGS = 10V
6V
5V
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 28A
T
J = 125°C
T
J = 25°C
T
J = -55°C
C
oss
C
iss
I
D = 28A
V
DS = 400V
V
DS = 100V
V
DS = 250V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 150°C
T
J = 25°C
TJ = 125°C
T
J = 150°C
C
rss
6.5V
V
GS
,GATE-TO-SOURCE
VOLTAGE
(V)
g fs
,TRANSCONDUCTANCE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(A)
I SD,
REVERSE
DRAIN
CURRENT
(A)
C,
CAPACITANCE
(pF)
I D
,DRAIN
CURRENT
(A)
I D
,DRIAN
CURRENT
(A)
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
Figure 2, Output Characteristics
T
J, JUNCTION TEMPERATURE (°C)
V
GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature
Figure 4, Transfer Characteristics
I
D, DRAIN CURRENT (A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
5
10
15
20
25
0
5
10
15
20
25
30
-55 -25
0
25
50
75 100 125 150
0
2
4
6
8
10
0
10
20
30
40
50
0
100
200
300
400
500
0
50
100
150 200 250
300 350
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
250
200
150
100
50
0
2.5
2.0
1.5
1.0
0.5
0
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
175
150
125
100
75
50
25
0
20,000
10,000
1000
100
10
175
150
125
100
75
50
25
0
APT54H50B2_L
050-8120
Rev
A
5-2007
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