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參數(shù)資料
| 型號： | APT50N60JCCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 64K |
| 代理商： | APT50N60JCCU2 |
APT50N60JCCU2
APT
50N60JCCU2
–
Rev
2
M
ay,
2
008
www.microsemi.com
2- 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 22.5A
40
45
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6.8
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
0.32
nF
Qg
Total gate Charge
150
Qgs
Gate – Source Charge
34
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 44A
51
nC
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Tj=25°C
VGS = 10V
VBus = 400V
ID = 44A
RG = 3.3Ω
20
ns
Eon
Turn-on Switching Energy
405
Eoff
Turn-off Switching Energy
Tj=25°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
520
J
Eon
Turn-on Switching Energy
660
Eoff
Turn-off Switching Energy
Tj=125°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
635
J
VSD
Diode Forward Voltage
VGS = 0V, IS = - 44A
0.9
1.2
V
trr
Reverse Recovery Time
Tj = 25°C
600
ns
Qrr
Reverse Recovery Charge
IS = - 44A
VR = 400V
diS/dt = 100A/s
Tj = 25°C
17
C
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
400
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
200
2000
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 125°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2
2.4
V
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/s
28
nC
f = 1MHz, VR = 200V
130
Q
Total Capacitance
f = 1MHz, VR = 400V
100
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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