參數(shù)資料
型號(hào): APT50N60JCCU2
廠(chǎng)商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): JFETs
英文描述: 50 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, ISOTOP-4
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 64K
代理商: APT50N60JCCU2
APT50N60JCCU2
APT
50N60JCCU2
Rev
2
M
ay,
2
008
www.microsemi.com
1- 3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
50
ID
Continuous Drain Current
Tc = 80°C
38
IDM
Pulsed Drain current
130
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
45
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
290
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
Super Junction
MOSFET Power Module
K
D
G
S
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 50A @ Tc = 25°C
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