參數(shù)資料
型號： APT50M75JLLU3
廠商： Advanced Power Technology Ltd.
英文描述： ISOTOP Buck chopper MOSFET Power Module
中文描述： 1000V的集電極降壓斬波器MOSFET的功率模塊
文件頁數(shù)： 3/8頁
文件大?。?/td> 504K
代理商： APT50M75JLLU3
APT50M75JLLU3
A
APT website – http://www.advancedpower.com
3 – 8
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
I
F
= 30A
I
F
= 60A
I
F
= 30A
V
R
= 600V
V
R
= 600V
V
R
= 200V
I
F
=1A,V
R
=30V
di/dt =100A/μs
Min
Typ
1.6
1.9
1.4
44
Max
1.8
250
500
Unit
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
I
RM
Maximum Reverse Leakage Current
μA
C
T
Junction Capacitance
pF
Reverse Recovery Time
T
j
= 25°C
23
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
85
160
4
8
130
700
70
1300
30
t
rr
Reverse Recovery Time
ns
I
RRM
Maximum Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/μs
nC
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
ns
nC
A
I
F
= 30A
V
R
= 400V
di/dt =1000A/μs
T
j
= 125°C
Thermal and package characteristics
Symbol Characteristic
Min
2500
-55
Typ
29.2
Max
0.27
1.21
20
150
300
1.5
Unit
MOSFET
Diode
R
thJC
Junction to Case
R
thJA
V
ISOL
T
J
,T
STG
Storage Temperature Range
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Wt
Package Weight
Typical
MOSFET
Performance Curve
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
°C/W
V
°C
N.m
g
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