參數(shù)資料
型號： APT50M75JLLU3
廠商： Advanced Power Technology Ltd.
英文描述： ISOTOP Buck chopper MOSFET Power Module
中文描述： 1000V的集電極降壓斬波器MOSFET的功率模塊
文件頁數(shù)： 2/8頁
文件大?。?/td> 504K
代理商： APT50M75JLLU3
APT50M75JLLU3
A
APT website – http://www.advancedpower.com
2 – 8
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 25.5A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= ±20
V, V
DS
= 0V
Min
500
3
Typ
Max
100
500
75
5
±100
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
5590
1180
85
123
Max
Unit
pF
33
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 51A
65
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
10
20
21
Fall Time
Resistive Switching
V
GS
= 15V
V
Bus
= 250V
I
D
= 51A
R
G
= 0.6
5
ns
Eon
Turn-on Switching Energy
755
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 330V
I
D
= 51A,
R
G
= 5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 330V
I
D
= 51A,
R
G
= 5
726
μJ
Eon
Turn-on Switching Energy
1241
Eoff
Turn-off Switching Energy
846
μJ
Eon includes diode reverse recovery
In accordance with JEDEC standard JESD24-1.
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