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參數(shù)資料
| 型號： | APT50M75JLLU2 |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 494K |
| 代理商： | APT50M75JLLU2 |
APT50M75JLLU2
A
PT
50M
75J
L
U
2–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
2 – 8
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
75
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5590
Coss
Output Capacitance
1180
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
85
pF
Qg
Total gate Charge
123
Qgs
Gate – Source Charge
33
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
65
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
21
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 250V
ID = 51A
RG = 0.6
W
5
ns
Eon
Turn-on Switching Energy
u
755
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5
726
J
Eon
Turn-on Switching Energy
u
1241
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5
846
J
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1.
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| APT50M75JLLU2 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLLU3 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLLU3 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLL | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLL | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M75JLLU2_06 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Boost chopper MOSFET Power Module |
| APT50M75JLLU3 | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT50M75LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT50M75LFLLG | 功能描述:MOSFET N-CH 500V 57A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT50M75LLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
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