參數(shù)資料
型號： APT50M75JLLU3
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 1/8頁
文件大小： 494K
代理商： APT50M75JLLU3
APT50M75JLLU3
A
PT
50M
75J
L
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
1 – 8
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
A
S
G
D
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
51
ID
Continuous Drain Current
Tc = 80°C
39
IDM
Pulsed Drain current
204
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
75
m
W
PD
Maximum Power Dissipation
Tc = 25°C
290
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
VDSS = 500V
RDSon = 75m
W max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP Buck chopper
MOSFET Power Module
A
D
G
S
相關(guān)PDF資料
PDF描述
APT50M75JLL 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M75JLL 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M75WLL 48 A, 500 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA
APT50M80B2VR 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M80B2VRG 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50M75LFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT50M75LFLLG 功能描述:MOSFET N-CH 500V 57A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT50M75LLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT50M75LLLG 功能描述:MOSFET N-CH 500V 57A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT50M80 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*